UT3409G-AE2-R datasheet(2/4 Pages) UTC

Part #	UT3409G-AE2-R

Description	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2 / 4 page

UT3409

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-244.E



ABSOLUTE MAXIMUM RATING (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 3)

ID

-2.6

A

Pulsed Drain Current (Note 2)

IDM

-20

A

Power Dissipation

PD

1.4

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. Surface mounted on 1 in

2 copper pad of FR4 board



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 3)

θJA

90

°C/W



ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BVDSS

ID=-250μA, VGS=0V

-30

V

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V

-1

μA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250μA

-1

-1.9

-3

V

On state drain current

ID(ON)

VGS=-4.5V, VDS=-5V

-5

A

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-2.6A

97

130

mΩ

VGS=-4.5V, ID=-2A

166

200

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-15V, f=1MHz

302

370

pF

Output Capacitance

COSS

50.3

pF

Reverse Transfer Capacitance

CRSS

37.8

pF

SWITCHING PARAMETERS

Total Gate Charge

10V

QG

VGS=-10V, VDS=-15V, ID=-2.6A

6.8

9

nC

4.5V

2.4

nC

Gate Source Charge

QGS

1.6

nC

Gate Drain Charge

QGD

0.95

nC

Turn-ON Delay Time

tD(ON)

VGS=-10V, VDS=-15V,

RL=5.8Ω, RGEN=3Ω

7.5

ns

Turn-ON Rise Time

tR

3.2

ns

Turn-OFF Delay Time

tD(OFF)

17

ns

Turn-OFF Fall-Time

tF

6.8

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=-1A, VGS=0V

-0.82

-1

V

Maximum Body-Diode Continuous Current

IS

-2

A

Body Diode Reverse Recovery Time

tRR

IF=-2.6A, dI/dt=100A/μs

16.8

22

ns

Body Diode Reverse Recovery Charge

QRR

IF=-2.6A, dI/dt=100A/μs

10

nC

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