UT3403

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-145.E



PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

-30

V

Gate-Source Voltage

± 12

V

Continuous Drain Current (Note 3)

-2.6

A

Pulsed Drain Current (Note 1)

-20

A

Power Dissipation(Note 3)

1.4

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

100

125

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.6

-1

-1.4

V

Drain-Source On-State Resistance (Note 2)

102

130

mΩ

128

180

mΩ

187

260

mΩ

DYNAMIC PARAMETERS

Input Capacitance

409

500

pF

Output Capacitance

55

pF

Reverse Transfer Capacitance

42

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

5.3

8

ns

Turn-ON Rise Time

4.4

9

ns

Turn-OFF Delay Time

31.5

45

ns

Turn-OFF Fall Time

8

16

ns

Total Gate Charge (Note 2)

4.4

5.3

nC

Gate-Source Charge

0.8

nC

Gate-Drain Charge

1.32

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-0.85

-1

V

Maximum Continuous Drain-Source Diode

Forward Current

-2

A

Reverse Recovery Time

15.8

19

ns

Reverse Recovery Charge

8

12

nC

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in