UP9T15G

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-208.B



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

12.5

A

Pulsed Drain Current

60

A

Power Dissipation

12.5

W

Linear Derating Factor

0.1

W/°C

Junction Temperature

+150

°C

Strong Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

110

°C/W

Junction-to-Case

10

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Drain-Source Leakage Current

1

µA

Gate-Body Leakage Current

±100

nA

0.02

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

0.5

1.5

V

Static Drain-Source On-Resistance

50

mΩ

80

DYNAMIC PARAMETERS

Input Capacitance

f=1.0MHz

360

580

pF

Output Capacitance

70

pF

Reverse Transfer Capacitance

50

pF

SWITCHING PARAMETERS

Total Gate Charge(Note2)

=10 A

5

8

nC

Gate Source Charge

1

nC

Gate Drain Charge

2

nC

Turn-ON Delay Time(Note2)

8

ns

Turn-ON Rise Time

55

ns

Turn-OFF Delay Time

10

ns

Turn-OFF Fall-Time

3

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage(Note2)

1.3

V

Reverse Recovery Time(Note2)

A/μs

17

ns

Reverse Recovery Charge

9

nC

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width ≤ 300us , duty cycle ≤ 2%.