UG3K

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-003.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Total Power Dissipation(120mW per element must

not be exceeded)

150

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

v

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The Following Characteristics Apply to Both TR1 and TR2.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5

V

Collector Cutoff Current

0.5

µA

Emitter Cutoff Current

0.5

µA

Collector-Emitter Saturation Voltage

0.3

V

DC Current Transfer Ratio

100

250

600

Input Resistance

3.29

4.7

6.11

KΩ