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UG1N120L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UG1N120L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UG1N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO.,LTD 2 of 3 www.unisonic.com.tw QW-R207-028.a ABSOLUTE MAXIMUM RATING (T C =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Voltage BVCES 1200 V Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Collector Current Continuous TC=25°C IC 5.3 A TC=110°C 2.7 A Collector Current Pulsed (Note 1) ICM 6 A Power Dissipation Total at TC=25°C PD 60 W Power Dissipation Derating TC>25°C 0.476 W/°C Forward Voltage Avalanche Energy (Note 2) EAV 10 mJ Short Circuit Withstand Time (Note 3) at VGE=15V tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE=12V tSC 13 µs Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. ICE=7A, L=400µH, VGE=15V, TJ=25°C. 4. VCE(PK)=840V, TJ=125°C, RG=82 Ω. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 2.1 °C/W ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BVCES IC=250µA, VGE=0V 1200 V Emitter to Collector Breakdown Voltage BVECS IC=10mA, VGE=0V 15 V Collector to Emitter Leakage Current ICES VCE=1200V TC=25°C 250 µA TC=125°C 20 µA TC=150°C 1.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC=1.0A, VGE=15V TC=25°C 2.5 2.9 V TC=150°C 3.8 4.3 V Gate to Emitter Threshold Voltage VGE(TH) IC=50µA, VCE=VGE 6.0 7.1 V Gate to Emitter Leakage Current IGES VGE=±20V ±250 nA Switching SOA SSOA TJ=150°C, RG=82 Ω, VGE=15V, L=2mH, VCE(PK)=1200V 6 A Gate to Emitter Plateau Voltage VGEP IC=1.0A, VCE=600V 9.2 V On-State Gate Charge QG(ON) IC=1.0A, VCE=600V VGE=15V 14 20 nC VGE=20V 15 21 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ=25°C ICE=1.0A, VCE=30V, VGE=15V, RG=82 Ω 200 ns Current Rise Time trl 470 ns Current Turn-Off Delay Time td(OFF)I 118 ns Current Fall Time tfl 200 ns |
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