UG1N120

Preliminary

Insulated Gate Bipolar Transistor

UNISONIC TECHNOLOGIES CO.,LTD

2 of 3

www.unisonic.com.tw

QW-R207-028.a



PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Emitter Voltage

1200

V

Gate to Emitter Voltage Continuous

±20

V

Gate to Emitter Voltage Pulsed

±30

V

Collector Current Continuous

5.3

A

2.7

A

Collector Current Pulsed (Note 1)

6

A

60

W

0.476

W/°C

Forward Voltage Avalanche Energy (Note 2)

10

mJ

8

µs

13

µs

Operating Junction Temperature Range

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature.

Ω.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

2.1

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector to Emitter Breakdown Voltage

1200

V

Emitter to Collector Breakdown Voltage

15

V

Collector to Emitter Leakage Current

250

µA

20

µA

1.0

mA

Collector to Emitter Saturation Voltage

2.5

2.9

V

3.8

4.3

V

Gate to Emitter Threshold Voltage

6.0

7.1

V

Gate to Emitter Leakage Current

±250

nA

Switching SOA

SSOA

6

A

Gate to Emitter Plateau Voltage

9.2

V

On-State Gate Charge

14

20

nC

15

21

nC

Current Turn-On Delay Time

Ω

200

ns

Current Rise Time

470

ns

Current Turn-Off Delay Time

118

ns

Current Fall Time

200

ns