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UDN302G-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UDN302G-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UDN302 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-278.B P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET DESCRIPTION The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UDN302L-AE3-R UDN302G-AE3-R SOT-23 S G D Tape Reel MARKING NC03 L: Lead Free G: Halogen Free |
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