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IPLU300N04S4-1R1 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPLU300N04S4-1R1 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPLU300N04S4-1R1 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 9300 12090 pF Output capacitance C oss - 2070 2700 Reverse transfer capacitance Crss - 70 160 Turn-on delay time t d(on) - 30 - ns Rise time t r - 25 - Turn-off delay time t d(off) - 30 - Fall time t f - 35 - Gate Charge Characteristics 2) Gate to source charge Q gs - 52 68 nC Gate to drain charge Q gd - 16 37 Gate charge total Q g - 116 151 Gate plateau voltage V plateau - 5.6 - V Reverse Diode Diode continous forward current 2) I S - - 300 A Diode pulse current 2) I S,pulse - - 1200 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.3 V Reverse recovery time 2) t rr - 65 - ns Reverse recovery charge 2) Q rr - 85 - nC Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=300 A, R G=3.5 W V DD=32 V, I D=300 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 392A at 25°C. V R=20 V, I F=50A, di F/dt =100 A/µs T C=25 °C Rev. 1.0 page 3 2014-11-21 |
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