PHC21025_15 datasheet(2/16 Pages) PHILIPS

Part #	PHC21025

Description	Complementary intermediate level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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PHC21025

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Product data sheet

Rev. 04 — 17 March 2011

2 of 16

NXP Semiconductors

PHC21025

Complementary intermediate level FET

[1]

Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a

thermal resistance from ambient to solder point of 90 K/W.

2.

Pinning information

3.

Ordering information

Dynamic characteristics

QGD

gate-drain charge

VGS =-10 V; ID =-2.3A;

VDS =-15 V; Tj =25°C;

P-channel; see Figure 12

-3

-nC

VGS =10V; ID =2.3 A;

VDS =15V; Tj =25°C;

N-channel; see Figure 11

-2.5

-nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S1

source1

SOT96-1 (SO8)

2

G1

gate1

3S2

source2

4

G2

gate2

5D2

drain2

6D2

drain2

7D1

drain1

8D1

drain1

4

5

1

8

sym114

D1

D2

S1

G1

S2

G2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PHC21025

SO8

plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

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