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MJE13003L-V-X-TM3-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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MJE13003L-V-X-TM3-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 9 page UNISONIC TECHNOLOGIES CO., LTD MJE13003-V NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 9 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R204-034.a NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits |
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