MJE13001-Q

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R221-023.B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

400

V

Collector-Base Voltage

600

V

Emitter Base Voltage

7

V

Collector Current

200

mA

Collector Power Dissipation

SOT-89

550

mW

TO-92

750

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

600

V

Collector-Emitter Breakdown Voltage

400

V

Emitter-Base Breakdown Voltage

7

V

Base-Emitter Voltage

1.1

V

Collector Cutoff Cut-Off Current

100

μA

Collector Emitter Cut-Off Current

200

μA

Emitter Cutoff Cut-Off Current

100

μA

ON CHARACTERISTICS

DC Current Gain

10

70

5

Collector-Emitter Saturation Voltage

0.5

V

Base-Emitter Saturation Voltage

1.2

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

8

MHz

Resistive Load

Storage Time

1.5

μs

Fall Time

0.3

μs



RANK

A

B

C

D

E

F

G

H

I

J

K

L

RANGE 10-15

15-20

20-25

25-30

30-35

35-40

40-45

45-50

50-55

55-60

60-65

65-70