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13003ADG Datasheet(PDF) 3 Page - Unisonic Technologies |
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13003ADG Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 5 page 13003ADG Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R223-023.c ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO(SUS) 400 V Collector-Base Voltage VCBO 700 V Emitter Base Voltage VEBO 9 V Collector Current Continuous IC 1.5 A Peak (1) ICM 3 Base Current Continuous IB 0.75 A Peak (1) IBM 1.5 Emitter Current Continuous IE 2.25 A Peak (1) IEM 4.5 Power Dissipation TA=25°C TO-126 PD 1.4 W TO-92 1.1 W TO-251 1.56 W TC=25°C TO-126 20 W TO-92 1.5 W TO-251 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. |
Similar Part No. - 13003ADG_15 |
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Similar Description - 13003ADG_15 |
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