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24C08B-ESN Datasheet(PDF) 1 Page - Microchip Technology |
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24C08B-ESN Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 12 page  © 1996 Microchip Technology Inc. DS21081D-page 1 FEATURES • Single supply with operation from 4.5-5.5V • Low power CMOS technology - 1 mA active current typical - 10 µA standby current typical at 5.5V • Organized as 4 or 8 blocks of 256 bytes (4 x 256 x 8) or (8 x 256 x 8) • 2-wire serial interface bus, I2C ™ compatible • Schmitt trigger, filtered inputs for noise suppres- sion • Output slope control to eliminate ground bounce • 100 kHz compatibility • Self-timed write cycle (including auto-erase) • Page-write buffer for up to 16 bytes • 2 ms typical write cycle time for page-write • Hardware write protect for entire memory • Can be operated as a serial ROM • ESD protection > 4,000V • 1,000,000 ERASE/WRITE cycles guaranteed • Data retention > 200 years • 8-pin DIP, 8-lead or 14-lead SOIC packages • Available for extended temperature range DESCRIPTION The Microchip Technology Inc. 24C08B/16B is an 8K or 16K bit Electrically Erasable PROM intended for use in extended/automotive temperature ranges. The device is organized as four or eight blocks of 256 x 8-bit mem- ory with a 2-wire serial interface. The 24C08B/16B also has a page-write capability for up to 16 bytes of data. The 24C08B/16B is available in the standard 8-pin DIP and both 8-lead and 14-lead surface mount SOIC pack- ages. - Automotive (E): -40˚C to +125˚C PACKAGE TYPES BLOCK DIAGRAM NC SS CC A0 A1 NC A2 NC V 1 2 3 4 5 6 7 14 13 12 NC SCL SDA NC 9 8 11 10 WP V NC 14-lead SOIC A0 A1 A2 VSS 1 2 3 4 8 7 6 5 VCC WP SCL SDA A0 A1 A2 VSS 1 2 3 4 8 7 6 5 VCC WP SCL SDA PDIP 8-lead SOIC HV GENERATOR EEPROM ARRAY PAGE LATCHES YDEC XDEC SENSE AMP R/W CONTROL MEMORY CONTROL LOGIC I/O CONTROL LOGIC WP SDA SCL VCC VSS 24C08B/16B 8K/16K 5.0V I2C™ Serial EEPROMs I2C is a trademark of Philips Corporation. This document was created with FrameMaker404 |
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