BUK9240-100A

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Product data sheet

Rev. 02 — 15 June 2010

3 of 14

NXP Semiconductors

BUK9240-100A

N-channel TrenchMOS logic level FET

4.

Limiting values

[1]

Peak drain current is limited by chip, not package.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

100

V

drain-gate voltage

-

-

100

V

gate-source voltage

-10

-

10

V

drain current

see Figure 3

--33

A

-

-

23.8

A

peak drain current

see Figure 3

[1]

-

-

135

A

total power dissipation

--114

W

storage temperature

-55

-

175

°C

junction temperature

-55

-

175

°C

peak gate-source

voltage

-15

-

15

V

Source-drain diode

source current

--33

A

peak source current

-

-

135

A

Avalanche ruggedness

non-repetitive

drain-source

avalanche energy

--31

mJ