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BUK9516_9616-55A Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK9516_9616-55A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55A Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Fig.7. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(VGS); conditions ID = 25 A; Fig.8. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.9. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.10. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V 0 20 40 60 80 100 02468 10 VDS/V ID/A 2.2 2.4 2.6 3.0 3.2 3.4 3.6 VGS / V = 2.8 4.0 5.0 6.0 10.0 0 20 40 60 80 100 012345 VGS / V ID/A 25 Tj / C= 175 10 12 14 16 18 20 22 20 30 40 50 60 70 80 90 100 ID / A 5.0 4.6 4.2 4.0 3.6 3.4 VGS / V = RDS(ON) / mOhm 0 10 20 30 40 50 60 0 20406080 100 ID / A gfs / S 10 15 20 25 30 35 23456789 10 VGS / V RDS(ON) / mOhm -100 -50 0 50 100 150 200 0.5 1 1.5 2 2.5 Tmb / degC Rds(on) normlised to 25degC May 2000 4 Rev 1.000 |
Similar Part No. - BUK9516_9616-55A_15 |
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Similar Description - BUK9516_9616-55A_15 |
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