BUK9516_9616-55A_15 datasheet(4/9 Pages) PHILIPS

Part #	BUK9516_9616-55A

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

TrenchMOS

 transistor

BUK9516-55A

Logic level FET

BUK9616-55A

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(VGS); conditions ID = 25 A;

Fig.8. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.9. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.10. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V

0

20

40

60

80

100

02468

10

VDS/V

ID/A

2.2

2.4

2.6

3.0

3.2

3.4

3.6

VGS / V =

2.8

4.0

5.0

6.0

10.0

0

20

40

60

80

100

012345

VGS / V

ID/A

25

Tj / C= 175

10

12

14

16

18

20

22

20

30

40

50

60

70

80

90

100

ID / A

5.0

4.6

4.2

4.0

3.6

3.4

VGS / V =

RDS(ON) / mOhm

0

10

20

30

40

50

60

0

20406080

100

ID / A

gfs / S

10

15

20

25

30

35

23456789

10

VGS / V

RDS(ON) / mOhm

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

Tmb / degC

Rds(on) normlised to 25degC

May 2000

4

Rev 1.000

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