BUK9520-100A

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Product data sheet

Rev. 02 — 7 February 2011

7 of 13

NXP Semiconductors

BUK9520-100A

N-channel TrenchMOS logic level FET

Fig 9.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

03nd83

0

20

40

60

80

0123

(A)

03nd81

0

1

2

3

4

5

0

2040

6080

100

(V)

03aa33

0

0.5

1

1.5

2

2.5

-60

0

60

120

180

°C)

(V)

max

typ

min

03nd86

10

20

30

40

0

50

100

150

200

250

(m

Ω)

3.2 3.4 3.6 3.8

5