BUK9606-55B_15 datasheet(8/13 Pages) PHILIPS

Part #	BUK9606-55B

Description	N-channel TrenchMOS FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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8 / 13 page

BUK9606-55B_4

Product data sheet

Rev. 04 — 23 July 2009

8 of 13

NXP Semiconductors

BUK9606-55B

N-channel TrenchMOS FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

−60

180

120

060

03ng52

1.0

1.5

0.5

2.0

2.5

VGS(th)

(V)

0

Tj (°C)

min

typ

max

03ng53

VGS (V)

03

2

1

10−4

10−5

10−2

10−3

10−1

ID

(A)

10−6

min

typ

max

03nj64

4

5

6

7

3

7

11

15

VGS (V)

RDSon

(m

Ω)

03ne89

0

0.5

1

1.5

2

-60

0

60

120

180

Tj (

°C)

a

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