BUK9620-55A

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Product data sheet

Rev. 02 — 4 June 2010

6 of 13

NXP Semiconductors

BUK9620-55A

N-channel TrenchMOS logic level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Forward transconductance as a function of

drain current; typical values

03nc91

0

20

40

60

80

100

120

140

160

180

200

02

46

8

10

(A)

10

9

8

7

3

4

5

6

2.2

03nc90

10

15

20

25

30

24

68

10

(m

Ω)

03aa36

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

0123

(A)

max

typ

min

03nc88

0

10

20

30

40

50

0

2040

6080

(S)