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BUK9620-55A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9620-55A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page BUK9620-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 4 June 2010 5 of 13 NXP Semiconductors BUK9620-55A N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 55 --V ID =0.25mA; VGS =0V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 11 0.5 --V ID =1mA; VDS =VGS; Tj =25°C; see Figure 11 11.5 2V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 11 --2.3 V IDSS drain leakage current VDS =55V; VGS =0V; Tj = 25 °C - 0.05 10 µA VDS =55V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VDS =0V; VGS =10V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-10 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =25A; Tj = 25 °C --21 m Ω VGS =5V; ID =25A; Tj = 175 °C; see Figure 12; see Figure 13 --40 m Ω VGS =10V; ID =25A; Tj = 25 °C - 15 18 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 12; see Figure 13 - 1720m Ω Dynamic characteristics Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 1660 2210 pF Coss output capacitance - 290 346 pF Crss reverse transfer capacitance - 194 266 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -19 - ns tr rise time - 124 - ns td(off) turn-off delay time - 92 - ns tf fall time - 93 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die ; Tj =25°C -4.5 -nH from upper edge of drain mounting base to centre of die ; Tj =25°C -2.5 -nH LS internal source inductance from source lead to source bond pad ; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30 V; Tj =25°C -52 - ns Qr recovered charge - 81 - nC |
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