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BUK7107-55ATE Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7107-55ATE Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page BUK7107-55ATE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 19 February 2009 7 of 15 NXP Semiconductors BUK7107-55ATE N-channel TrenchPLUS standard level FET LD internal drain inductance from upper edge of drain mounting base to center of die -2.5 - nH LS internal source inductance from source lead to source bond pad - 7.5 - nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 17 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30V -80 - ns Qr recovered charge - 200 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit |
Similar Part No. - BUK7107-55ATE_15 |
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Similar Description - BUK7107-55ATE_15 |
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