BUK7508-55A_15 datasheet(6/14 Pages) PHILIPS

Part #	BUK7508-55A

Description	N-channel TrenchMOS standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BUK7508-55A

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Product data sheet

Rev. 03 — 14 June 2010

6 of 14

NXP Semiconductors

BUK7508-55A

N-channel TrenchMOS standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID =0.25mA; VGS =0V; Tj = -55 °C

50

-

V

ID =0.25mA; VGS =0V; Tj = 25 °C

55

--V

VGS(th)

gate-source threshold voltage ID =1mA; VDS =VGS; Tj = 175 °C;

see Figure 10

1

--V

ID =1mA; VDS =VGS; Tj =25°C;

see Figure 10

234V

ID =1mA; VDS =VGS; Tj =-55 °C;

see Figure 10

--4.4

V

IDSS

drain leakage current

VDS =55V; VGS =0V; Tj = 175 °C

-

500

µA

VDS =55V; VGS =0V; Tj = 25 °C

-

0.05

10

µA

IGSS

gate leakage current

VDS =0V; VGS =20V; Tj = 25 °C

-

2

100

nA

VDS =0V; VGS =-20 V; Tj = 25 °C

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A; Tj = 175 °C;

see Figure 11; see Figure 12

--16

m

Ω

VGS =10V; ID =25A; Tj =25°C;

see Figure 11; see Figure 12

-6.8

8

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =44V; VGS =0V;

Tj =25°C; see Figure 13

-76

-

nC

QGS

gate-source charge

-

16

-

nC

QGD

gate-drain charge

-

35

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 14

-

3264

4352

pF

Coss

output capacitance

-

719

863

pF

Crss

reverse transfer capacitance

-

390

533

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =5V;

RG(ext) =10 Ω; Tj =25 °C

-24

-

ns

tr

rise time

-

94

-

ns

td(off)

turn-off delay time

-

100

-

ns

tf

fall time

-

80

-

ns

LD

internal drain inductance

from contact screw on mounting base

to centre ; Tj =25 °C

-3.5

-nH

from drain lead 6 mm from package to

centre of die ; Tj =25°C

-4.5

-nH

LS

internal source inductance

from source lead to source bond pad ;

Tj =25°C

-7.5

-nH

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0 V; Tj =25°C;

see Figure 15

-

0.85

1.2

V

trr

reverse recovery time

IS =75A; dIS/dt = -100 A/µs;

VGS =-10 V; VDS =30 V; Tj =25°C

-65

-

ns

Qr

recovered charge

-

170

-

nC

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