Electronic Components Datasheet Search |
|
MMDT2222AG-AL6-R Datasheet(PDF) 2 Page - Unisonic Technologies |
|
MMDT2222AG-AL6-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page MMDT2222A DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-016.B ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current-Continuous IC 600 mA Power Dissipation (Note 2) PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Maximum combined dissipation. THERMAL DATA (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 625 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS (Note) Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 75 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 40 V Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6.0 V Collector-Current ICBO VCB=60V, IE=0 10 nA VCB=60V, IE=0, TA=150°C 10 μA Collector- Current ICEX VCE=60V, VEB(OFF)=3.0V 10 nA Emitter- Current IEBO VEB=3.0V, IC=0 10 nA Base- Current IBL VCE=60V, VEB(OFF)=3.0V 20 nA ON CHARACTERISTICS (Note) DC Current Gain hFE IC=100µA, VCE=10V 35 IC=1.0mA, VCE=10V 50 IC=10mA, VCE=10V 75 IC=150mA, VCE=10V 100 300 IC=500mA, VCE=10V 40 IC=10mA, VCE=10V, TA=-55°C 50 IC=150mA, VCE=1.0V 35 Collector-Emitter Saturation Voltage VCE(SAT) IC=150mA, IB=15mA 0.3 V IC=500mA, IB=50mA 1.0 V Base-Emitter Saturation Voltage VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V IC=500mA, IB=50mA 2.0 V SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO VCB=10V, f=1.0MHz, IE=0 8 pF Input Capacitance CIBO VEB=0.5V, f=1.0MHz, IC=0 25 pF Current Gain-Bandwidth Product fT VCE=20V, IC=20mA, f=100MHz 300 MHz Noise Figure NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 4.0 dB SWITCHING CHARACTERISTICS Delay Time tD VCC=30V,IC=150mA,VBE(OFF)=-0.5V, IB1=15mA 10 ns Rise Time tR 25 ns Storage Time tS VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns Fall Time tF 60 ns Note: Short duration pulse test used to minimize self-heating effect. |
Similar Part No. - MMDT2222AG-AL6-R |
|
Similar Description - MMDT2222AG-AL6-R |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |