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DTB113Z Datasheet(PDF) 2 Page - Unisonic Technologies |
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DTB113Z Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page DTB113Z PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-092.D ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -10 ~ +5 V Output Current IC -500 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN(OFF) VCC= -5V, IOUT= -100μA -0.3 V VIN(ON) VOUT= -0.3V, IOUT= -20mA -3 Output Voltage VOUT(ON) IOUT/IIN= -50mA/-2.5mA -0.3 V Input Current IIN VIN=-5V -7.2 mA Output Current IOUT(OFF) VCC=-50V, VIN=0V -0.5 μA DC Current Gain hFE VOUT=-5V, IOUT=-50mA 56 Input Resistance R1 0.7 1 1.3 KΩ Resistance Ratio R2/R1 8 10 12 Transition Frequency fT VCE=-10V, IE= 50mA, f=100MHz(Note) 200 MHz Note: Transition frequency of the device |
Similar Part No. - DTB113Z_15 |
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Similar Description - DTB113Z_15 |
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