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BUK7611-55A Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BUK7611-55A
Description  N-channel TrenchMOS standard level FET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7611-55A Datasheet(HTML) 3 Page - NXP Semiconductors

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BUK7611-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 16 June 2010
3 of 13
NXP Semiconductors
BUK7611-55A
N-channel TrenchMOS standard level FET
4.
Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
--55
V
VDGR
drain-gate voltage
RGS =20kΩ
--55
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
--75
A
Tmb =100 °C; VGS = 10 V; see Figure 1
--61
A
IDM
peak drain current
Tmb =25°C; tp ≤ 10 µs; pulsed;
see Figure 3
-
-
347
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
-
166
W
Tstg
storage temperature
-55
-
175
°C
Tj
junction temperature
-55
-
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
--75
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
-
347
A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID =65A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
--211
mJ
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
Tmb (°C)
0
200
150
50
100
03aa24
40
80
120
Ider
(%)
0
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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