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BUK9Y14-40B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9Y14-40B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BUK9Y14-40B_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 2 June 2008 8 of 12 NXP Semiconductors BUK9Y14-40B N-channel TrenchMOS logic level FET Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 16. Source current as a function of source-drain voltage; typical values QG (nC) 025 20 10 15 5 003aab412 2 3 1 4 5 VGS (V) 0 VDS = 14 V VDS = 32 V VDS (V) 10−1 102 10 1 003aab410 1000 1500 500 2000 2500 C (pF) 0 Ciss Coss Crss T j =25 °C; ID =10 A V GS =0V ; f =1 MHz VSD (V) 0.0 1.0 0.8 0.4 0.6 0.2 003aab411 20 30 10 40 50 IS (A) 0 Tj = 25 °C Tj = 175 °C V GS =0V |
Similar Part No. - BUK9Y14-40B_15 |
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Similar Description - BUK9Y14-40B_15 |
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