BUK9Y53-100B_15 datasheet(7/12 Pages) PHILIPS

Part #	BUK9Y53-100B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 12 page

BUK9Y53-100B_1

Product data sheet

Rev. 01 — 30 August 2007

7 of 12

NXP Semiconductors

BUK9Y53-100B

N-channel TrenchMOS logic level FET

ID = 1 mA; VDS =VGS

Tj =25 °C; VDS =VGS

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Tj =25 °C; VDS =25V

VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Tj (°C)

−60

180

120

060

003aab986

1.0

1.5

0.5

2.0

2.5

VGS(th)

(V)

0.0

min

typ

max

003aab987

VGS (V)

03

2

1

10−4

10−5

10−2

10−3

10−1

ID

(A)

10−6

min

typ

max

ID (A)

530

25

15

20

10

003aab425

30

40

50

gfs

(S)

20

VDS (V)

10−1

102

10

1

003aab418

1000

15000

500

2000

2500

C

(pF)

0

Ciss

Coss

Crss

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