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BUK624R5-30C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK624R5-30C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK624R5-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 17 September 2010 6 of 14 NXP Semiconductors BUK624R5-30C N-channel TrenchMOS intermediate level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 30 --V ID =250 µA; VGS =0V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9; see Figure 10 1.8 2.3 2.8 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 9 --3.3 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 9 0.8 --V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 175 °C - - 500 µA VDS =30V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VDS =0V; VGS =20V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C; see Figure 11 -3.8 4.5 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 11 -4.8 6 m Ω VGS =4.5 V; ID =25A; Tj =25°C; see Figure 11 -5.6 7.5 m Ω VGS =10V; ID =25A; Tj = 175 °C; see Figure 12; see Figure 11 --8.6 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =24V; VGS =10V; see Figure 13; see Figure 14 -78 -nC ID =25A; VDS =24V; VGS =5V; see Figure 13; see Figure 14 -45 -nC QGS gate-source charge ID =25A; VDS =24V; VGS =10V; see Figure 13; see Figure 14 -15 -nC QGD gate-drain charge - 20 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 3530 4707 pF Coss output capacitance - 623 748 pF Crss reverse transfer capacitance - 381 522 pF td(on) turn-on delay time VDS =25V; RL =1 Ω; VGS =10V; RG(ext) =10 Ω -19 -ns tr rise time - 54 - ns td(off) turn-off delay time - 135 - ns tf fall time - 83 - ns LD internal drain inductance from upper edge of drain mounting base to centre of die ; Tj =25°C -3.5 -nH LS internal source inductance from source lead to source bond pad ; Tj =25°C -7.5 -nH |
Similar Part No. - BUK624R5-30C_15 |
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Similar Description - BUK624R5-30C_15 |
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