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BUK624R5-30C Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BUK624R5-30C
Description  N-channel TrenchMOS intermediate level FET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK624R5-30C Datasheet(HTML) 6 Page - NXP Semiconductors

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BUK624R5-30C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
6 of 14
NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =250 µA; VGS =0V; Tj = 25 °C
30
--V
ID =250 µA; VGS =0V; Tj = -55 °C
27
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj =25°C;
see Figure 9; see Figure 10
1.8
2.3
2.8
V
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 9
--3.3
V
ID =1mA; VDS =VGS; Tj = 175 °C;
see Figure 9
0.8
--V
IDSS
drain leakage current
VDS =30V; VGS =0V; Tj = 175 °C
-
-
500
µA
VDS =30V; VGS =0V; Tj = 25 °C
-
0.02
1
µA
IGSS
gate leakage current
VDS =0V; VGS =20V; Tj = 25 °C
-
2
100
nA
VDS =0V; VGS =-20 V; Tj = 25 °C
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A; Tj =25°C;
see Figure 11
-3.8
4.5
m
VGS =5V; ID =25A; Tj =25 °C;
see Figure 11
-4.8
6
m
VGS =4.5 V; ID =25A; Tj =25°C;
see Figure 11
-5.6
7.5
m
VGS =10V; ID =25A; Tj = 175 °C;
see Figure 12; see Figure 11
--8.6
m
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =24V; VGS =10V;
see Figure 13; see Figure 14
-78
-nC
ID =25A; VDS =24V; VGS =5V;
see Figure 13; see Figure 14
-45
-nC
QGS
gate-source charge
ID =25A; VDS =24V; VGS =10V;
see Figure 13; see Figure 14
-15
-nC
QGD
gate-drain charge
-
20
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25°C; see Figure 15
-
3530
4707
pF
Coss
output capacitance
-
623
748
pF
Crss
reverse transfer
capacitance
-
381
522
pF
td(on)
turn-on delay time
VDS =25V; RL =1 Ω; VGS =10V;
RG(ext) =10 Ω
-19
-ns
tr
rise time
-
54
-
ns
td(off)
turn-off delay time
-
135
-
ns
tf
fall time
-
83
-
ns
LD
internal drain
inductance
from upper edge of drain mounting base
to centre of die ; Tj =25°C
-3.5
-nH
LS
internal source
inductance
from source lead to source bond pad ;
Tj =25°C
-7.5
-nH


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