BUK625R0-40C

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Product data sheet

Rev. 1 — 17 September 2010

7 of 14

NXP Semiconductors

BUK625R0-40C

N-channel TrenchMOS intermediate level FET

Source-drain diode

source-drain voltage

see Figure 16

-

0.85

1.2

V

reverse recovery time

-42

-ns

recovered charge

-

65

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Output characteristics: drain current as a

function of drain-source voltage; typical values

003aae320

0

20

40

60

80

100

0

20

406080

(S)

003a a e 772

0

5

10

15

20

0

5

10

15

20

(m

)

003a a e 776

0

25

50

75

100

02

46

(A)

°C

°C

003a a e 778

0

25

50

75

100

0

0.5

1

1.5

2

(A)

3.8

4.0

5.0

10.0

3.2

3.4

3.6

4.5