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IPD65R650CE Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPD65R650CE Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 17 page 7 650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16 Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.2A,Tj=25°C Reverse recovery time trr - 270 - ns VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 2 - µC VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 13 - A VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 |
Similar Part No. - IPD65R650CE_15 |
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Similar Description - IPD65R650CE_15 |
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