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BUK6211-75C Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK6211-75C Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 28 September 2010 8 of 15 NXP Semiconductors BUK6211-75C N-channel TrenchMOS FET Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage Tj = 25°C; tp = 300 µs Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad805 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aae887 0 10 20 30 40 0 25 50 75 100 125 ID (A) RDSon (m Ω) 3.2 3.6 4.5 3.4 3.8 VGS (V) = 5, 6, 10 4 003aad804 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj ( °C) a |
Similar Part No. - BUK6211-75C_15 |
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Similar Description - BUK6211-75C_15 |
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