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BUK6226-75C Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK6226-75C Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK6226-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 4 October 2010 8 of 14 NXP Semiconductors BUK6226-75C N-channel TrenchMOS FET Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad805 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aae865 0 25 50 75 100 0 20 406080 ID(A) RDSon (m Ω) 4.5 VGS(V) = 3.8 5.0 4.0 8.0 003aad804 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj ( °C) a |
Similar Part No. - BUK6226-75C_15 |
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Similar Description - BUK6226-75C_15 |
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