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IKW50N65WR5 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IKW50N65WR5
Description  Reverse conducting IGBT with monolithic body diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW50N65WR5 Datasheet(HTML) 7 Page - Infineon Technologies AG

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7
IKW50N65WR5
ReverseConductingSeries
Rev.1.2,2015-03-27
Figure 1.
Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj
≤175°C,VGE=15V,tp=1µs)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1
10
100
1000
0.1
1
10
100
not for linear use
Figure 2.
Powerdissipationasafunctionofcase
temperature
(Tvj
≤175°C)
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
0
40
80
120
160
200
240
280
Figure 3.
Collectorcurrentasafunctionofcase
temperature
(VGE
≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
ICmax
max. current limited by bondwire
Figure 4.
Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
VGE = 20V
17V
15V
13V
11V
9V
8V
7V
6V


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