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IKW40N65WR5 Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # IKW40N65WR5
Description  Reverse conducting IGBT with monolithic body diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW40N65WR5 Datasheet(HTML) 10 Page - Infineon Technologies AG

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10
IKW40N65WR5
ReverseConductionSeries
Rev.1.2,2015-03-27
Figure 13.
Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=400V,
VGE=150/V,IC=40A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[
Ω]
0
10
20
30
40
50
60
70
80
90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Eoff
Eon
Ets
Figure 14.
Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=40A,RG(on)=20
Ω,RG(off)=20Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Eon
Ets
Figure 15.
Typicalgatecharge
(IC=40A)
QGE,GATECHARGE[nC]
0
20
40
60
80 100 120 140 160 180 200
0
2
4
6
8
10
12
14
16
VCC=130V
VCC=520V
Figure 16.
Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
10
20
30
40
50
60
70
80
90 100
10
100
1000
1E+4
Cies
Coes
Cres


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