BSZ0501NSI_15 datasheet(5/12 Pages) INFINEON

Part #	BSZ0501NSI

Description	Metal Oxide Semiconductor Field Effect Transistor

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

5 / 12 page

5

OptiMOSTM5Power-MOSFET,30V

BSZ0501NSI

Rev.2.0,2015-04-27

Final Data Sheet

4Electricalcharacteristics

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

30

-

V

VGS=0V,ID=10mA

Breakdown voltage temperature

coefficient

dV(BR)DSS/dTj -

15

-

mV/K

ID=10mA,referencedto25°C

Gate threshold voltage

VGS(th)

1.2

-

2

V

VDS=VGS,ID=250µA

Zero gate voltage drain current

IDSS

-

2

0.5

-

mA

VDS=20V,VGS=0V,Tj=25°C

VDS=24V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

-

10

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

2.1

1.7

2.5

2.0

m

Ω

VGS=4.5V,ID=20A

VGS=10V,ID=20A

Gate resistance

RG

-

1.4

2.3

Ω

-

Transconductance

gfs

55

110

-

S

|VDS|>2|ID|RDS(on)max,ID=20A

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

1)

Ciss

-

1500

2000

pF

VGS=0V,VDS=15V,f=1MHz

Output capacitance

1)

Coss

-

540

730

pF

VGS=0V,VDS=15V,f=1MHz

Reverse transfer capacitance

Crss

-

36

-

pF

VGS=0V,VDS=15V,f=1MHz

Turn-on delay time

td(on)

-

4

-

ns

VDD=15V,VGS=10V,ID=30A,

RG,ext=1.6

Ω

Rise time

tr

-

4

-

ns

VDD=15V,VGS=10V,ID=30A,

RG,ext=1.6

Ω

Turn-off delay time

td(off)

-

22

-

ns

VDD=15V,VGS=10V,ID=30A,

RG,ext=1.6

Ω

Fall time

tf

-

3

-

ns

VDD=15V,VGS=10V,ID=30A,

RG,ext=1.6

Ω

1) Defined by design. Not subject to production test

Similar Part No. - BSZ0501NSI_15

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	BSZ0500NSI	1Mb / 12P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-07-13
	BSZ0500NSI	1Mb / 12P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-07-13
	BSZ0502NSI	1Mb / 12P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-07-13
	BSZ0502NSI	1Mb / 12P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-07-13
	BSZ0503NSI	1Mb / 12P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0

More results

Similar Description - BSZ0501NSI_15

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IPW60R280C6FKSA1	1Mb / 19P	Metal Oxide Semiconductor Field Effect Transistor 2010-02-09 revision:2.1
	IPA60R520C6	1Mb / 17P	Metal Oxide Semiconductor Field Effect Transistor 2014-12-10 revision:2.2
	IPD65R190C7	1Mb / 15P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2013-10-17
	IPP65R074C6	1Mb / 15P	Metal Oxide Semiconductor Field Effect Transistor 2011-09-14 revision:2.1
	IPD60R3K3C6	963Kb / 14P	Metal Oxide Semiconductor Field Effect Transistor Rev 2.3, 2015-11-12
	IPA65R125C7	1Mb / 15P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-10-11
	IPA60R600E6	1Mb / 17P	Metal Oxide Semiconductor Field Effect Transistor Rev. 2.0, 2010-04-12
	IPA60R280C6	1Mb / 19P	Metal Oxide Semiconductor Field Effect Transistor 2014-12-09 revision:2.2
	IPD65R250C6	1Mb / 15P	Metal Oxide Semiconductor Field Effect Transistor 2011-09-15 revision:2.1
	IPX80R2K8CE	2Mb / 15P	Metal Oxide Semiconductor Field Effect Transistor Rev.2.2,2016-04-12
	IPW65R048CFDA	1Mb / 14P	Metal Oxide Semiconductor Field Effect Transistor 2012-03-28 revision:2.0

More results

BSZ0501NSI Datasheet(PDF) 5 Page - Infineon Technologies AG

BSZ0501NSI Datasheet(HTML) 5 Page - Infineon Technologies AG

Similar Part No. - BSZ0501NSI_15

Similar Description - BSZ0501NSI_15

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL