June 11,2015-REV.01

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

-60

-

-

V

Gate Threshold Voltage

-2.2

-2.76

-3.2

V

Drain-Source On-State Resistance

-

96

115

m

Ω

-

125

160

Zero Gate Voltage Drain Current

-

-0.01

-1.0

uA

Gate-Source Leakage Current

-

+10

+100

nA

Diode Forward Voltage

-

-0.78

-1.0

V

Dynamic

(Note 5)

Total Gate Charge

(Note 2,3)

-

13.4

-

nC

Gate-Source Charge

-

3.4

-

Gate-Drain Charge

-

3.0

-

Input Capacitance

Ciss

f=1.0MHZ

-

685

-

pF

Output Capacitance

Coss

-

63

-

Reverse Transfer Capacitance

Crss

-

29

-

Turn-On Delay Time

(Note 2,3)

-

7

-

ns

Turn-On Rise Time

-

40

-

Turn-Off Delay Time

-

23

-

Turn-Off Fall Time

-

10

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

-10

A

Reverse Recovery Time

trr

(Note 2)

-

28

-

ns

Reverse Recovery Charge

Qrr

-

42

-

nC

NOTES :

1.

The test by surface mounted on 1 inch FR4 board with 2oz copper.

2.

3.

The Power dissipation is limit by 150

℃ junction temperature.

4.

Pulse width<300us, Duty cycle<2%

5.

Guaranteed by design, not subject to production testing.