July 9,2015-REV.00

Page 2

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C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

75

-

-

V

Gate Threshold Voltage

2.0

2.7

3.5

V

Drain-Source On-State Resistance

-

103

126

m

Ω

-

133

185

Zero Gate Voltage Drain Current

-

0.01

1.0

uA

Gate-Source Leakage Current

-

+20

+100

nA

Dynamic

(Note 5)

Total Gate Charge

(Note 2,3)

-

6.4

-

nC

Gate-Source Charge

-

1.9

-

Gate-Drain Charge

-

1.2

-

Input Capacitance

Ciss

f=1.0MHZ

-

318

-

pF

Output Capacitance

Coss

-

33

-

Reverse Transfer Capacitance

Crss

-

8

-

Turn-On Delay Time

(Note 2,3)

-

3

-

ns

Turn-On Rise Time

-

29

-

Turn-Off Delay Time

-

9

-

Turn-Off Fall Time

-

22

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

12

A

Diode Forward Voltage

-

0.8

1.0

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics

3.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency

and duty cycles to keep initial TJ =25°C.

4.

The maximum current rating is package limited

5.

defined as the solder mounting surface of the drain pins. Mounted on a 1 inch

6.

7.

Guaranteed by design, not subject to production testing