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MJE13007L-TF2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE13007L-TF2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page MJE13007 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R203-019.I ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Sustaining Voltage VCEO 400 V Collector-Emitter Breakdown Voltage VCBO 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current Continuous IC 8.0 A Peak (1) ICM 16 A Base Current Continuous IB 4.0 A Peak (1) IBM 8.0 A Emitter Current Continuous IE 12 A Peak (1) IEM 24 A Power Dissipation (TC = 25°C) TO-220 PD 80 W TO-220F/TO-220F1 36 TO-220F2 38 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 1.56 °C/W TO-220F/TO-220F1 3.47 TO-220F2 3.28 Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage VCEO(SUS) IC=10mA, IB=0 400 V Collector Cutoff Current ICBO VCES=700V 0.1 mA VCES=700V, TC=125°C 1.0 mA Emitter Cutoff Current IEBO VEB=9.0V, IC=0 100 μA DC Current Gain hFE1 IC=2.0A, VCE=5.0V 8.0 40 hFE2 IC=5.0A, VCE=5.0V 5.0 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=2.0A, IB=0.4A 1.0 V IC=5.0A, IB=1.0A 2.0 V IC=8.0A, IB=2.0A 3.0 V IC=5.0A, IB=1.0A, TC=100°C 3.0 V Base-Emitter Saturation Voltage VBE(SAT) IC=2.0A, IB=0.4A 1.2 V IC=5.0A, IB=1.0A 1.6 V IC=5.0A, IB=1.0A, TC=100°C 1.5 V Current-Gain-Bandwidth Product fT IC=500mA, VCE=10V, f=1.0 MHz 4.0 14 MHz Output Capacitance COB VCB=10V, IE=0, f=0.1MHz 80 pF RESISTIVE LOAD (TABLE 1) Delay Time tD VCC=125V, IC=5.0A, IB1=IB2=1.0A, tP=25μs, Duty Cycle≤1.0% 0.025 0.1 μs Rise Time tR 0.5 1.5 μs Storage Time tS 1.8 3.0 μs Fall Time tF 0.23 0.7 μs Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% |
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