MJE13009D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R203-041.A

PARAMETER

SYMBOL

RATINGS

UNIT

700

V

400

V

Emitter-Base Voltage

9

V

DC

12

A

Collector Current

Pulse(Note 2)

24

A

DC

6

A

Base Current

Pulse(Note 2)

12

A

DC

18

A

Emitter Current

Pulse(Note 2)

36

A

Total Power Dissipation

2

W

Linear Derating Factor Above

16

mW/°C

Total Power Dissipation

100

W

Linear Derating Factor Above

800

mW/°C

Operating Junction Temperature

-65 ~ +150

°C

Storage Temperature

-65 ~ +150

°C

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolu te maximum ratings are stress ratings only and functional device operation is not implied.

Notes:

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C /W

Junction to Case

3.13

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

400

V

1

mA

Collect Cut-Off Current

5

mA

Emitter Cut-Off Current

1

mA

ON CHARACTERISTICS

(Note)

8

40

DC Current Gain

6

30

1

V

1.5

V

2

V

Collector-Emitter Saturation Voltage

3

V

1.2

V

1.6

V

Base -Emitter Saturation Voltage

1.5

V

ON CHARACTERISTICS

(Note)

Current Gain Bandwidth Product

4

Output Capacitance

180

pF