MJE13002

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 9

www.unisonic.com.tw

QW-R204-014.D

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

300

V

Collector-Emitter Voltage

600

V

Emitter Base Voltage

9

V

Collector Current

Continuous

1.5

A

Peak (1)

3

Base Current

Continuous

0.75

A

Peak (1)

1.5

Emitter Current

Continuous

2.25

A

Peak (1)

4.5

Total Power Dissipation

TA=25°C

1.4

Watts

MW/°C

Derate above 25°C

11.2

TC=25°C

40

Watts

MW/°C

Derate above 25°C

320

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

TO-92

25

°C/W

TO-126

3.12

Junction to Ambient

TO-92

122

°C/W

TO-126

89

Maximum Load Temperature for Soldering Purposes:

1/8” from Case for 5 Seconds

275

°C

Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%

2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most

circuits entirely from the information presented. SOA Limit curves – representing boundaries on device

characteristics – are given to facilitate “Worst case” design.