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2N5551G-X-T92-A-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N5551G-X-T92-A-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2N5551 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R201-002.F ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 PC 625 mW Collector Dissipation SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 180 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 6 V Collector Cut-off Current ICBO VCB=120V, IE=0 50 nA Emitter Cut-off Current IEBO VBE=4V, IC=0 50 nA DC Current Gain(Note) hFE1 VCE=5V, IC=1mA 80 hFE2 VCE=5V, IC=10mA 80 160 400 hFE3 VCE=5V, IC=50mA 80 Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA 0.15 V IC=50mA, IB=5mA 0.2 V Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA 1 V IC=50mA, IB=5mA 1 V Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Output Capacitance COB VCB=10V, IE=0 f=1MHz 6.0 pF Noise Figure NF IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz 8 dB Note: Pulse test: PW<300μs, Duty cycle<2% CLASSIFICATION OF hFE2 RANK A B C RANGE 80-170 150-240 200-400 |
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