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BUK9C10-65BIT Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9C10-65BIT Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page BUK9C10-65BIT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 21 June 2010 8 of 15 NXP Semiconductors BUK9C10-65BIT N-channel TrenchPLUS logic level FET Fig 8. Transfer Characteristics; drain current as a function of gate-source voltage; typical values. Fig 9. Forward transconductance as a function of drain current; typical values. Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. VGS (V) 05 4 23 1 001aam028 ID (A) 40 80 120 0 60 100 20 Tj = 150 °C Tj = 25 °C 003a a d972 0 100 200 300 400 500 015 30 45 60 ID (A) gfs (S ) Tj (°C) −60 180 120 060 001aam029 1.0 1.5 0.5 2.0 2.5 VGS(th) (V) 0 max typ min 001aam030 VGS (V) 03 2 1 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 max typ min |
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