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TLD5085EJ Datasheet(PDF) 9 Page - Infineon Technologies AG |
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TLD5085EJ Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 19 page Data Sheet 10 Revision1.1 2015-03-10 Infineon® LITIX™ Power TLD5085EJ Confidential Electrical Characteristics 5 Electrical Characteristics Tj = -40°C to +150°C, all voltages with respect to ground (unless otherwise specified) 5.1 Description The gate of the power-switch is driven by the Gate driver which is supplied by the external capacitor connected to pin BDS (Buck Driver Supply) using the bootstrap principle. BDS is the supply pin for the integrated gate driver of the internal power-switch. The power-switch has to be in the RDSon region. If VGS is not high enough, the power-switch can not operate in the RDSON region, which means high power dissipation. An integrated under voltage lockout function (BDS UV-Comparator) supervising the ’bootstrap’ capacitor voltage ensures that the device is always driven with a sufficient bootstrap voltage in order to prevent from extensive heat up of the power-switch. An integrated charge pump supports the gate driver in case of low input supply voltage, small differential voltage between input supply and output voltage at low current and during startup. In order to minimize emission, the charge pump is switched off if the input voltage is sufficient for supplying the bootstrap. The soft start function generates a defined ramp of the reference voltage during the first 0.5 ms (typ.) after device initialization and if the Device is autorestarting after a thermal shutdown. This function is disabled during the dimming operation via the PWMI-pin. Figure 5-1 Block Diagram Buck Regulator Ramp Generator Logic Temp. Sensor Power Switch BDS Charger Charge Pump COMP 3 VS 8 BUO 6 BDS 5 PWMI 1 FB 4 GND 2 Overcurrent Comp. = BDS UV Comp. PWM Comp. Feedback Error Amp. Clock Soft Start Ramp VREF=0.6 V Gate Driver |
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