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Data Sheet

1 of 8

Rev. 02.1, 2015-06-03

PXAC260622SC

Thermally-Enhanced High Power RF LDMOS FET

75 W, 28 V, 2496 – 2690 MHz

Description

The PXAC260622SC is a 75-watt LDMOS FET with an asymetric

design for use in multi-standard cellular power amplifier applications

in the 2496 to 2690 MHz frequency band. It features dual-path design,

input and output matching, and a thermally-enhanced, surface-mount

package with earless flange. Manufactured with Infineon's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability.

PXAC260622SC

Package H-37248H-4

with formed leads

RF Characteristics

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

14.5

15.8

—

dB

Drain Efficiency

40

42

—

%

Adjancent Channel Power Ratio

ACPR

—

–30

–27

dBc

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

• Typical pulsed performance in a Doherty configura-

10 µs, 10% DC

- Gain = 16dB

- Efficiency = 45%

• Integrated ESD protection

• Pb-free and RoHS compliant

(CW) output power

-75

-50

-25

0

25

50

75

0

4

8

12

16

20

24

27

31

35

39

43

47

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxfc260622sc_g1