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IPG20N10S4-36A Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPG20N10S4-36A Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPG20N10S4-36A OptiMOS ™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current one channel active I D T C=25 °C, V GS=10 V 1) 20 A T C=100 °C, V GS=10 V 2) 17 Pulsed drain current 2) one channel active I D,pulse - 80 Avalanche energy, single pulse 2, 4) E AS I D=10A 60 mJ Avalanche current, single pulse 4) I AS - 15 A Gate source voltage V GS - ±20 V Power dissipation one channel active P tot T C=25 °C 43 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value V DS 100 V R DS(on),max4) 36 m W I D 20 A Product Summary Type Package Marking IPG20N10S4-36A PG-TDSON-8-10 4N1036 PG-TDSON-8-10 Rev. 1.1 page 1 2015-04-13 |
Similar Part No. - IPG20N10S4-36A_15 |
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Similar Description - IPG20N10S4-36A_15 |
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