May 1999

165

MIC502

MIC502

Micrel

Supply Voltage (V

Output Sink Current (I

Output Source Current (I

Input Voltage (any pin) ......................... –0.3V to V

Junction Temperature (T

Storage Temperature (T

Lead Temperature (Soldering, 5 sec.) ...................... 260

°C

ESD, Note 3

Supply Voltage (V

Sleep Voltage (V

Temperature Range (T

Power Dissipation at 25

°C

SOIC ................................................................... 800mW

DIP ...................................................................... 740mW

Derating Factors

SOIC ............................................................... 8.3mW/

°C

Plastic DIP ....................................................... 7.7mW/

°C

Electrical Characteristics

4.5V

≤ V

Symbol

Parameter

Condition

Min

Typ

Max

Units

I

DD

Supply Current, Operating

VSLP = grounded, OTF, OUT = open,

0.5

1.2

mA

C

I

DD(slp)

Supply Current, Sleep

VT1 = grounded,

240

400

µA

VSLP, OTF, OUT = open, C

Driver Output

t

R

Output Rise Time, Note 5

I

TBD

50

µs

t

F

Output Fall Time, Note 5

I

TBD

50

µs

I

OL

Output Sink Current

V

0.9

mA

I

OH

Output Source Current

4.5V

≤ V

10

mA

10.8V

≤ V

10

mA

I

OS

Sleep-Mode Output Leakage

V

1

µA

Thermistor and Sleep Inputs

V

PWM(max)

100% PWM Duty Cycle

67

70

73

%V

DD

Input Voltage

V

PWM(span)

V

37

40

43

%V

DD

V

HYST

Sleep Comparator Hysteresis

8

11

14

%V

DD

V

IL

VT1 Shutdown Threshold

0.7

V

V

IH

VT1 Startup Threshold

1.1

V

V

OT

VT1 Overtemperature Fault

Note 6

74

77

80

%V

DD

Threshold

I

VT1, VT2, VSLP Input Current

–2.5

1

µA

t

RESET

Reset Setup Time

minimum time V

30

µs

Note 5

Oscillator

f

Oscillator Frequency, Note 7

4.5V

≤ V

24

27

30

Hz

10.8V

≤ V

27

30

33

Hz

f

Oscillator Frequency Range

Note 7

15

90

Hz

t

STARTUP

Startup Interval

64/f

s