TIP35C_15 datasheet(2/4 Pages) UTC

Part #	TIP35C

Description	HIGH POWER TRANSISTORS

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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TIP35C

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R214-013.C



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (IE = 0)

VCBO

100

V

Collector-Emitter Voltage (IB = 0)

VCEO

100

V

Emitter-Base Voltage (IC = 0)

VEBO

5

V

Collector Current

IC

25

A

Collector Peak Current

ICM

50

A

Base Current

IB

5

A

Total Dissipation (TC =25 °C)

PD

125

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance Junction-Case

θJC

1

°C/W



ELECTRICAL CHARACTERISTICS (Tc =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-off Current (IE = 0)

ICBO

VCB = 100 V

10

μA

Emitter Cut-off Current (IC = 0)

IEBO

VEB = 5 V

10

μA

Collector-Emitter Sustaining Voltage (IB = 0)

V(BR)CEO

IC = 50 mA

100

V

Collector-Emitter Saturation Voltage

VCE(SAT)

IB = 1.5 A, IC = 15 A

1.8

V

IB = 5 A, IC = 25 A

4

V

Base-Emitter Voltage

VBE(ON)

VCE = 5 V, IC = 5 A

1.5

V

DC Current Gain

hFE1

VCE = 5 V, IC = 1.5 A

55

160

hFE2

VCE = 4 V, IC = 15 A

15

Transition Frequency

fT

VCE = 5 V, IC = 1 A

3

MHz



CLASSIFICATION OF hFE1

RANK

R

O

RANGE

55~110

80~160

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