MJD210_15 datasheet(2/5 Pages) UTC

Part #	MJD210

Description	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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MJD210

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R213-001.C

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-25

V

Emitter-Base Voltage

VEBO

-7

V

Continuous

-5

A

Collector Current

Peak

IC

-10

A

Base Current

IB

-1

A

TC=25°C

12.5

W

Derate above 25

°C0.1

W/

°C

Ta=25

°C (Note2)

1.4

W

Total Device Dissipation

Derate above 25

°C

PD

0.011

W/

°C

Junction Temperature

TJ

+150

°C

Storage Junction Temperature

TSTG

-65 ~ +150

°C

Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When surface mounted on minimum pad sizes recommended.

THERMAL DATA (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

89.3

°C/W

Junction to Case

θJC

10

°C/W

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0

-25

V

VCB=-40V, IE=0

-100

nA

Collector Cutoff Current

ICBO

VCB=-40V, IE=0, TJ=125°C

-100

nA

Emitter Cutoff Current

IEBO

VBE=-7V, IC=0

-100

nA

ON CHARACTERISTICS

IC=-500mA, VCE=-1V

70

IC=-2A, VCE=-1V

45

180

DC Current Gain (Note 1)

hFE

IC=-5A, VCE=-2V

10

IC=-500mA, IB=-50mA

-0.3

IC=-2A, IB=-200mA

-0.75

Collector-Emitter Saturation Voltage (Note 1)

VCE(SAT)

IC=-5A, IB=-1A

-1.8

V

Base-Emitter Saturation Voltage (Note 1)

VBE(SAT)

IC=-5A, IB=-1A

-2.5

V

Base-Emitter On Voltage (Note 1)

VBE(ON)

IC=-2A, VCE=-1V

-1.6

V

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product (Note 2)

fT

IC=-100mA, VCE=-10V,

fTEST = 10MHz

65

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=0.1MHz

120

pF

Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%.

2. fT =｜hFE｜‧fTEST.

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