March 6,2015-REV.00

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

20

-

-

V

Gate Threshold Voltage

0.3

0.65

0.9

V

Drain-Source On-State Resistance

-

280

400

m

Ω

-

350

650

-

400

800

-

500

1200

-

700

3000

Zero Gate Voltage Drain Current

-

-

1

uA

Gate-Source Leakage Current

-

+0.5

+10

uA

Dynamic

(Note 5)

Total Gate Charge

(Note 1,2)

-

1.4

-

nC

Gate-Source Charge

-

0.22

-

Gate-Drain Charge

-

0.21

-

Input Capacitance

Ciss

f=1.0MHZ

-

67

-

pF

Output Capacitance

Coss

-

19

-

Reverse Transfer Capacitance

Crss

-

6

-

Turn-On Delay Time

(Note 1,2)

-

2.8

-

ns

Turn-On Rise Time

tr

-

20

-

Turn-Off Delay Time

-

23

-

Turn-Off Fall Time

tf

-

23

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

500

mA

Diode Forward Voltage

-

0.87

1.3

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

4.

The maximum current rating is package limited.

5.

Guaranteed by design, not subject to production testing.