December 31,2014-REV.02

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

20

-

-

V

Gate Threshold Voltage

0.5

0.77

1.2

V

Drain-Source On-State Resistance

-

24

27

m

Ω

-

33

41

-

62

85

Zero Gate Voltage Drain Current

-

0.01

1

uA

Gate-Source Leakage Current

-

+10

+100

nA

Dynamic

Total Gate Charge

(Note 1,2)

-

6.8

-

nC

Gate-Source Charge

-

1.3

-

Gate-Drain Charge

-

2

-

Input Capacitance

Ciss

f=1.0MHZ

-

513

-

pF

Output Capacitance

Coss

-

74

-

Reverse Transfer Capacitance

Crss

-

60

-

Switching

Turn-On Delay Time

(Note 1,2)

-

7

-

ns

Turn-On Rise Time

tr

-

57

-

Turn-Off Delay Time

-

24

-

Turn-Off Fall Time

tf

-

14

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

2.0

A

Diode Forward Voltage

-

0.69

1.2

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper

4.

The maximum current rating is package limited