SQV120N10-3M8_15 datasheet(3/9 Pages) VISHAY

Part #	SQV120N10-3M8

Description	Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQV120N10-3m8

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Vishay Siliconix

S13-1433-Rev. A, 01-Jul-13

3

Document Number: 63402

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

50

100

150

200

0

2

4

6

8

10

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 7 V

V

GS = 5 V

V

GS = 6 V

0

40

80

120

160

200

0

14

28

42

56

70

I

D - Drain Current (A)

T

C = 125 °C

T

C = - 55 °C

T

C = 25 °C

0

2000

4000

6000

8000

10000

0

20

40

60

80

100

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

30

60

90

120

150

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

C = - 55°C

T

C = 125°C

T

C = 25°C

0.000

0.002

0.004

0.006

0.008

0.010

0

20

40

60

80

100

120

I

D - Drain Current (A)

V

GS = 10 V

0

2

4

6

8

10

0

30

60

90

120

150

Q

g - Total Gate Charge (nC)

I

D = 70 A

V

DS = 50 V

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