PSMN6R0-25YLB_15 datasheet(7/15 Pages) PHILIPS

Part #	PSMN6R0-25YLB

Description	N-channel 25 V 6.1 m廓 logic level MOSFET in LFPAK using NextPower technology

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PSMN6R0-25YLB

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Product data sheet

Rev. 2 — 31 October 2011

7 of 15

NXP Semiconductors

PSMN6R0-25YLB

N-channel 25 V 6.1 m

Ω logic level MOSFET in LFPAK using NextPower technology

Qoss

output charge

VGS =0V; VDS =12V; f=1MHz

-

6.6

-

nC

Source-drain diode

VSD

source-drain voltage

IS =20A; VGS =0V; Tj =25°C;

see Figure 17

-

0.85

1.1

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/µs;

VGS =0V; VDS =12V

-27

-ns

Qr

recovered charge

-

18

-

nC

ta

reverse recovery rise time

VGS =0V; IS =20A;

dIS/dt = -100 A/µs; VDS =12V;

see Figure 18

-15

-ns

tb

reverse recovery fall time

-

12

-

ns

Table 6.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aag109

0

20

40

60

80

01

23

45

V

DS(V)

I

D

(A)

2.4

2.2

V

GS(V) = 3.0

2.6

2.8

3.5

4.5

10

003aag110

0

10

20

30

40

0

4

8

12

16

V

GS(V)

R

DSon

(m

Ω)

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PSMN6R0-25YLB Datasheet(PDF) 7 Page - NXP Semiconductors

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